Published September 26, 1988 | Version public
Journal Article Open

Equivalent circuit model for active-layer photomixing: Parasitic-free modulation of semiconductor lasers

Abstract

Direct modulation of a laser diode by active-layer photomixing is studied in terms of an equivalent circuit model. The model shows that this modulation technique achieves nearly perfect immunity to package, chip, and junction-related parasitic effects so that the measured modulation response reflects the intrinsic carrier-photon dynamics. The nonlinear gain effect is included in the model.

Additional Information

Copyright © 1988 American Institute of Physics (Received 27 May 1988; accepted 19 July 1988) This work is supported by the National Science Foundation, the Powell Foundation, and ATT Corporation.

Files

VAHapl88b.pdf

Files (570.6 kB)

Name Size Download all
md5:61de45be3a303cf0282159b099f97dbb
570.6 kB Preview Download

Additional details

Identifiers

Eprint ID
5852
Resolver ID
CaltechAUTHORS:VAHapl88b

Dates

Created
2006-11-06
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field