Published December 15, 2022 | Version public
Journal Article

Deposition of Horizontally Stacked Zn Crystals on Single Layer 1T-VSe₂ for Dendrite-Free Zn Metal Anodes

  • 1. ROR icon Hong Kong University of Science and Technology
  • 2. ROR icon South China University of Technology
  • 3. ROR icon Iowa State University
  • 4. ROR icon UNSW Sydney

Abstract

Owing to the moderate redox potential and high safety, Zn metal anodes have been garnering great attention. However, the poor reversibility and limited-service period caused by side reactions and dendrites hinder their applications. Here, a novel anode material consisting of a hexagonal 1T-Vanadium diselenide (1T-VSe₂) film on graphene is developed as a zincophilic template to epitaxially electrodeposit hexagonal closest packed Zn to replace the conventional metal substrates in Zn batteries. The 1T-VSe₂/Zn anode induces a horizontally (002)-oriented plate-like Zn crystal deposition morphology instead of randomly oriented grains that prompts the compact Zn deposition. According to density functional theory calculations, the VSe₂ substrate exhibits a higher Zn adsorption (−0.54 eV) than the graphene (−0.38 eV) or neat Zn (−0.48 eV) counterparts, leading to the enhanced zincophilicity and a lower nucleation overpotential, in agreement with the experimental results. The force field-based molecular dynamics simulations visualize Zn nucleation and morphological evolution at the atomistic level. The rapid adatom diffusion on VSe₂ leads to layer-by-layer Zn electrodeposits with higher fraction of the (002) facets to effectively prohibit dendrite formation. The symmetric cell with 1T-VSe₂/Zn delivers an ultra-stable cyclic life of 2500 h with 50 mV overpotential at 1 mA cm⁻² and 1 mAh cm⁻².

Additional Information

Y.L. and H.W. contributed equally to this work. Z.L. acknowledges support by the RGC (16304421), the Innovation and Technology Commission (ITC-CNERC14SC01), Guangdong Science and Technology Department (Project#: 2020A0505090003), Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology (No. 2020B1212030010), IER foundation (HT-JD-CXY-201907), and Shenzhen Special Fund for Central Guiding the Local Science and Technology Development (2021Szvup136). Technical assistance from the Materials Characterization and Preparation Facilities of HKUST is greatly appreciated. W.A.G. acknowledges financial support by the US National Science Foundation (NSF CBET-2005250) and from the Hong Kong Quantum AI Lab Ltd. in the frame of the InnoHK initiative.

Additional details

Identifiers

Eprint ID
117831
Resolver ID
CaltechAUTHORS:20221110-430801400.17

Funding

Innovation and Technology Commission (Hong Kong)
ITC-CNERC14SC01
Guangdong Science and Technology Department
2020A0505090003
Research Grants Council of Hong Kong
16304421
Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology
2020B1212030010
IER Foundation
HT-JD-CXY-201907
Shenzhen Special Fund for Central Guiding the Local Science and Technology Development
2021Szvup136
NSF
CBET-2005250
InnoHK initiative

Dates

Created
2022-12-08
Created from EPrint's datestamp field
Updated
2022-12-17
Created from EPrint's last_modified field

Caltech Custom Metadata

Other Numbering System Name
WAG
Other Numbering System Identifier
1543