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Published June 1, 1982 | Version public
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Interband Auger recombination in InGaAsP

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Abstract

The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.

Additional Information

© Copyright 1982 IEEE. Reprinted with permission. Manuscript received June 24, 1981. This work was supported by the National Science Foundation and the Office of Naval Research.

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10739
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CaltechAUTHORS:CHIieeejqe82b

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http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=23034&arnumber=1071648 (URL)

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2008-06-05
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Updated
2019-10-03
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