Capacity limits and matching properties of integrated capacitors

Abstract

Theoretical limits for the capacitance density of integrated capacitors with combined lateral and vertical field components are derived. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasifractal capacitors. This study leads to two new capacitor structures with high lateral-field efficiencies. These new capacitors demonstrate larger capacities, superior matching properties, tighter tolerances, and higher self-resonance frequencies than the standard horizontal parallel plate and previously reported lateral-field capacitors, while maintaining comparable quality factors. These superior qualities are verified by simulation and experimental results.

Additional Information

© Copyright 2002 IEEE. Reprinted with permission. Manuscript received July 23, 2001; revised October 19, 2001. [Posted online: 2002-08-07] The authors would like to thank Conexant Systems, Newport Beach, CA, and, in particular, S. Lloyd, R. Magoon, F. In'tveld, B. Bhattacharyya, J. Yu, and R. Hlavac of the Wireless Communications Division, and M. Racanelli, S. Stetson, and A. Karroy of the Silicon RF Platform Division for their help. The authors would also like to acknowledge I. Aoki, D. Ham, H. Hashemi, S. Kee, S. Koudounas, S. Mandegaran, and H. Wu of the California Institute of Technology for helpful discussions.

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