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Published June 26, 1989 | public
Journal Article Open

Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well


A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are presented as well as local spectra of cathodoluminescence emission from the structures. Blue shifting of the luminescence from the wire structures is observed.

Additional Information

© 1989 American Institute of Physics. Received 28 November 1988; accepted 19 April 1989. The authors would like to thank Professor Amnon Yariv for supplying the MBE samples used in this work. This work was supported by the Office of Naval Research and SDIO-ISTC. One of us (P.S.) would like to acknowledge support under a NSF Graduate Fellowship.


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