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Published October 19, 1992 | public
Journal Article Open

Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors


We propose a new device structure for obtaining visible light emission from wide band gap semiconductors. This heterojunction structure avoids ohmic contacting problems by using only the doping types which tend to occur naturally in II-VI semiconductors, while using a novel injection scheme to obtain efficient minority carrier injection into the wider band gap semiconductor. To verify this proposal we have fabricated green light emitting structures using n-CdSe and p-ZnTe regions separated by a graded MgxCd1-xSe injection region. Room temperature electroluminescence spectra from these devices demonstrate the effectiveness of the injection scheme, while the current-voltage characteristics show the merits of avoiding difficult ohmic contacts. We further show how the structure can be extended to blue wavelengths and beyond by opening up the band gap of the ZnTe recombination region with a MgyZn1-yTe alloy.

Additional Information

Copyright © 1992 American Institute of Physics. Received 8 June 1992; accepted 28 August 1992. The authors would like to acknowledge valuable discussions with D. H. Chow and E. T. Yu. The Defense Advanced Research Projects Agency provided critical support during the conception and development of this device concept with Contract Nos. N00014-90-J-1742 and N00014-86-K-0841. We have also benefited from the patient and helpful monitoring of this program by the Office of Naval Research through L. R. Cooper.


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