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Published December 15, 2009 | Published
Journal Article Open

Diameter-dependent conductance of InAs nanowires


Electrical conductance through InAsnanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAsnanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature, we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.

Additional Information

© 2009 American Institute of Physics. Received 21 September 2009. Accepted 02 November 2009. Published online 17 December 2009. We thank Juriaan van Tilburg and Claes Thelander for helpful discussions. This work was supported by the EU-project NODE (Grant No. 015783).

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