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Published January 1970 | Published
Journal Article Open

Optical Reflection Studies of Damage in Ion Implanted Silicon


Optical (3–6.5 eV) reflection spectra are presented for crystalline Si implanted at room temperature with 40 keV Sb ions to doses of less than 2×10¹⁵/cm². These spectra, and their deviation from the reflection spectrum of crystalline Si, are discussed in terms of a model based on the average dielectric properties of the implanted region. For samples having a high ion dose (>10¹⁵/cm²) the observed spectra resemble the spectra of sputtered Si films. Anneal characteristics of the reflection spectra are found to be dose dependent. These observations are compared to, and found to substantiate, the results of other experimental techniques for studying lattice damage in Si.

Additional Information

©1975 The American Physical Society. Received 2 December 1974. The authors would like to acknowledge stimulating discussions with O. J. Marsh, J. W. Mayer, G. S. Picus, and R. W. Hellwarth during the course of this work. The authors would also like to thank R. Hart for providing the Sb implants; E. Wolf for performing scanning electron microscopy studies; and H. Garvin and M. Braunstein for providing sputtered Si layers.

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October 13, 2023