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Published July 16, 2001 | Published
Journal Article Open

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices


This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 µm channel lengths exhibit large threshold voltage shifts (>3 V), submicrosecond program times, millisecond erase times, excellent endurance (> 10^(5) program/erase cycles), and long-term nonvolatility (> 10^(6) s) despite thin tunnel oxides (55-60 A). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications.

Additional Information

© 2001 American Institute of Physics. Received 29 March 2001; accepted 21 May 2001. This work was supported by the National Science Foundation.

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August 21, 2023
October 16, 2023