Published December 1, 1975
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Journal Article
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Temperature dependence of silicon luminescence due to splitting of the indirect ground state
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Abstract
The temperature dependence of the ratio of LO- to TO-phonon-assisted recombination luminescence of the indirect exciton in silicon is reported. The ratio is found to differ from that observed in absorption and to vary from ∼ 0.3 at 2°K to ∼ 0.1 at 13°K. The variation of the ratio with temperature is shown to be due to the splitting of the ground state of the exciton by several tenths of a meV. The relevance of these results to the recombination from the electron-hole condensate in silicon is discussed.
Additional Information
©1975 The American Physical Society. Received 28 July 1975. Work supported in part by the U.S. Office of Naval Research under Contract No. N00014-67-A-0094-0036 and the U.S. Air Force Office of Scientific Research under Grant No. 73-2490. The authors gratefully acknowledge an essential discussion with J. J. Hopfield and many useful discussions with J. W. Mayer.Files
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