Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published July 31, 1989 | Published
Journal Article Open

Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition


Carbon incorporation in ZnSe films grown by metalorganic chemical vapor deposition is reported. Secondary‐ion mass spectrometry measurements in ZnSe films grown from methylallylselenide and dimethylzinc show an enhanced carbon accumulation at the interface between ZnSe and GaAs. The carbon incorporation in the bulk ZnSe increases with the VI/II ratio and for a value of VI/II=3–4, the amount of incorporated carbon abruptly jumps to concentrations of 10^(21) cm^(−3), whereupon the films become polycrystalline. A new shallow peak I^C at 2.7920 eV dominates the near‐band‐edge low‐temperature photoluminescence spectra of all carbon‐contaminated ZnSe films. The intensity and linewidth of I^C increase with the VI/II ratio in a similar manner to the carbon concentration. This peak is proposed to be due to the radiative decay of excitons bound to a complex defect, which is associated with the presence of carbon in the films.

Additional Information

© 1989 American Institute of Physics. Received 24 March 1989; accepted 26 May 1989. The authors are grateful to G. Haugen for his technical assistance with the PL measurements, This work was supported by the National Science Foundation (CBT-8351249) and by a University of Minnesota Graduate School Doctoral Dissertation Fellowship to K. P. G. American Cyanamid is also thanked for providing the methylallyl Se source.

Attached Files

Published - GIAapl89a.pdf


Files (634.2 kB)
Name Size Download all
634.2 kB Preview Download

Additional details

August 19, 2023
October 17, 2023