Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

Creators: Henriksen, E. A.; Nandi, D.; Eisenstein, J. P.

Abstract

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed.

Additional Information

Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Received 12 September 2011; published 19 January 2012. We gratefully acknowledge conversations with S. Adam, J. Alicea, Y. Barlas, D. Bergman, B. Chickering, K. C. Fong, M. Koshino, C. H. Lui, A. MacDonald, and E. McCann. Special thanks go to G. Rossman for the use of his spectroscopy lab. This work is supported by the DOE under Grant No. DE-FG03-99ER45766 and the Gordon and Betty Moore Foundation.

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Published - PhysRevX.2.011004.pdf

Submitted - 1109.2385.pdf

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