Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

Creators: Fegadolli, William S.; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

Abstract

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)^3, is a promising and efficient light source for silicon photonics.

Additional Information

© 2013 Optical Society of America. Received August 27, 2013; revised October 7, 2013; accepted October 7, 2013; posted October 8, 2013 (Doc. ID 196423); published November 8, 2013. W. S. F., S. K., and A. S. thank the NSF CIAN ERC (Grant EEC-0812072) and Sanofi S. A. for the financial support, as well as P. A. P. thank the Spanish MICINN (Grant FA8655-12-1-2125) for financial support.

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