Published March 12, 2001
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SiGeC/Si superlattice microcoolers
Abstract
Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3omega method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 µm^2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm^2.
Additional Information
© 2001 American Institute of Physics. (Received 8 November 2000; accepted 24 January 2001) This work is supported by DARPA HERETIC program and the Army Research Office.Attached Files
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Additional details
Identifiers
- Eprint ID
- 2486
- Resolver ID
- CaltechAUTHORS:FANapl01
Funding
- Defense Advanced Research Projects Agency (DARPA)
- Army Research Office (ARO)
Dates
- Created
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2006-04-05Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field