Mechanical softening of thermoelectric semiconductor Mg_2Si from nanotwinning
Creators
Abstract
Nanotwinning exhibits strengthening effects in many metals, semiconductors, and ceramics. However, we show from ab-initio calculations that nanotwins significantly decrease the strength of thermoelectric semiconductor Mg_2Si. The theoretical shear strength of nanotwinned Mg_2Si is found to be 0.93 GPa, much lower than that (6.88 GPa) of flawless Mg_2Si. Stretching the Mg-Si bond under deformation leads to the structural softening and failure of flawless Mg_2Si. While in nanotwinned Mg_2Si, the Mg-Si bond at the twin boundary (TB) is expanded to accommodate the structural misfit, weakening the TB rigidity and leading to the low ideal shear strength.
Additional Information
© 2018 Acta Materialia Inc. Published by Elsevier Ltd. Received 24 April 2018, Revised 13 July 2018, Accepted 1 August 2018, Available online 9 August 2018. This work is partially supported by NSF of China under No. 51772231, the 111 Project of China under Project no. B07040. Q.A. was supported by the National Science Foundation CMMI program under grant no. 1727428. S.M. was thankful for the support by Act 211 Government of the Russian Federation, under No. 02.A03.21.0011 and by the Supercomputer Simulation Laboratory of South Ural State University [26].Attached Files
Supplemental Material - 1-s2.0-S1359646218304767-mmc1.docx
Supplemental Material - 1-s2.0-S1359646218304767-mmc2.zip
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1-s2.0-S1359646218304767-mmc2.zip
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Additional details
Additional titles
- Alternative title
- Mechanical softening of thermoelectric semiconductor Mg2 Si from nanotwinning
Identifiers
- Eprint ID
- 88679
- Resolver ID
- CaltechAUTHORS:20180809-080526657
Funding
- National Natural Science Foundation of China
- 51772231
- 111 Project of China
- B07040
- NSF
- CMMI-1727428
Dates
- Created
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2018-08-09Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field