Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure
We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2.
© 1994 American Institute of Physics. Received 7 April 1994; accepted 17 October 1994.