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Published December 19, 1994 | public
Journal Article Open

Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure


We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2.

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© 1994 American Institute of Physics. Received 7 April 1994; accepted 17 October 1994.


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August 22, 2023
August 22, 2023