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Published January 23, 1989 | Published
Journal Article Open

High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics


High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×10^(14)–1.5×10^(16) cm^(−3) and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm^2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films.

Additional Information

© 1989 American Institute of Physics. Received 11 August 1988; accepted for publication 10 November 1988. The authors are grateful to J. E. Potts, H. Cheng, and J. M. DePuydt for discussions and encouragement concerning this project. We also wish to thank G. Haugen for technical assistance with the PL measurements. This work was supported by 3M, NSF (PYI), and the Dreyfus Foundation.

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