Published May 1, 1983
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Journal Article
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Study and application of the mass transport phenomenon in InP
Abstract
A study of the mass transport phenomenon in InP is presented. Conditions and possible explanation for the transport process are discussed. Characteristics of the mass transported InP homojunctions are described and compared with those in the InP–InGaAsP heterojunctions. Effects of the mass transported junction on laser performance are discussed.
Additional Information
Copyright © 1983 American Institute of Physics. Received 2 November 1982; accepted 25 January 1983. This work is supported by the National Science Foundation and the Air Force Office of Scientific Research.Files
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- 10876
- Resolver ID
- CaltechAUTHORS:CHEjap83
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2008-06-14Created from EPrint's datestamp field
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