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Data-Driven Compression of Electron-Phonon Interactions
Yao Luo ,
1
Dhruv Desai,
1
Benjamin K. Chang,
1
Jinsoo Park,
1
and Marco Bernardi
1,2
,*
1
Department of Applied Physics and Materials Science, California Institute of Technology,
Pasadena, California 91125, USA
2
Department of Physics, California Institute of Technology, Pasadena, California 91125, USA
(Received 16 July 2023; revised 17 January 2024; accepted 29 March 2024; published 1 May 2024)
First-principles calculations of electron interactions in materials have seen rapid progress in recent years,
with electron-phonon (
e
-ph) interactions being a prime example. However, these techniques use large
matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and
obscures interpretability. For
e
-ph interactions, existing interpolation techniques leverage locality in real
space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we
show an efficient way to compress
e
-ph interactions based on singular value decomposition (SVD), a
widely used matrix and image compression technique. Leveraging (un)constrained SVD methods, we
accurately predict material properties related to
e
-ph interactions
including charge mobility, spin
relaxation times, band renormalization, and superconducting critical temperature
while using only a
small fraction (1%
2%) of the interaction data. These findings unveil the hidden low-dimensional nature of
e
-ph interactions. Furthermore, they accelerate state-of-the-art first-principles
e
-ph calculations by about 2
orders of magnitude without sacrificing accuracy. Our Pareto-optimal parametrization of
e
-ph interactions
can be readily generalized to electron-electron and electron-defect interactions, as well as to other
couplings, advancing quantitative studies of condensed matter.
DOI:
10.1103/PhysRevX.14.021023
Subject Areas: Computational Physics,
Condensed Matter Physics,
Quantum Physics
I. INTRODUCTION
Electrons in materials are subject to various interactions,
including those with phonons, other electrons, and
defects. Modeling of these interactions follows two main
approaches
analytic treatments that qualitatively capture
the main physics with minimal models using only a few
parameters, and first-principles calculations aiming at quan-
titative accuracy but often requiring specialized workflows,
high computational cost, and large amounts of data. A
middle ground between these extremes would require
formulating models of electron interactions that are eco-
nomical, accurate, and interpretable. Examples of efficient
models exist across domains: in quantum chemistry,
low-rank approximations
[1
3]
can compress two-electron
integrals to reduce the computational cost of post-Hartree-
Fock calculations
[4,5]
and extract the critical vibrational
modes in a chemical reaction
[6,7]
; in correlated-electron
physics, efficient parametrization of electron-electron (
e
-
e
)
interactions
[8]
enables the solution of functional
renormalization-group flow
[9,10]
and the Bethe-Salpeter
equation
[11,12]
. However, despite these isolated examples,
it remains challenging to formulate widely applicable
approaches to represent electron interactions both efficiently
and accurately.
Focusing on electron-phonon (
e
-ph) interactions, ana-
lytic treatments such as deformation potential for acoustic
phonons
[13,14]
and the Fröhlich model for optical
phonons
[15]
, which use only a few parameters to describe
e
-ph interactions, are still widely utilized
[16,17]
. In recent
years, first-principles calculations of
e
-ph interactions
using density functional theory (DFT)
[18]
and its linear-
response variant, density functional perturbation theory
(DFPT)
[19]
, have enabled quantitative studies of proper-
ties ranging from transport to excited state dynamics to
superconductivity
[20
33]
. Unlike the analytic models, in a
typical first-principles calculation one represents the
e
-ph
interactions using a multidimensional matrix with millions
or billions of entries. This enormous number of parameters,
which are computed rather than assumed, guarantees a
faithful description of microscopic details such as the
dependence on electronic states and phonon modes of
e
-ph interactions. Yet this complexity is also a barrier
toward obtaining minimal models and tackling new phys-
ics. For example, materials with strong or correlated
e
-ph
*
bmarco@caltech.edu
Published by the American Physical Society under the terms of
the
Creative Commons Attribution 4.0 International
license.
Further distribution of this work must maintain attribution to
the author(s) and the published article
s title, journal citation,
and DOI.
PHYSICAL REVIEW X
14,
021023 (2024)
2160-3308
=
24
=
14(2)
=
021023(12)
021023-1
Published by the American Physical Society
interactions need specialized treatments to capture polaron
effects
[28,30,34,35]
and electron correlations
[36,37]
.
Reducing the high dimensionality of first-principles
e
-ph
interactions would allow one to more efficiently describe
this physics while retaining quantitative accuracy. The
development of data-driven methods to tackle the high-
dimensional Hilbert space in the many-electron problem,
including neural network states
[38,39]
and tensor network
methods
[40
43]
, serves as inspiration.
Here we show a low-rank approximation of first-princi-
ples
e
-ph interactions which significantly accelerates
e
-ph
calculations while using only a small fraction (1%
2%) of
the data and preserving quantitative accuracy. This is
achieved by developing singular value decomposition
(SVD) calculations of
e
-ph matrices in Wannier basis to
achieve a minimal representation of
e
-ph coupling. We use
our compressed
e
-ph matrices to compute a range of
properties, including charge transport, spin relaxation, band
renormalization, and superconductivity, in both metals and
semiconductors. Across all benchmarks, the highly com-
pressed
e
-ph representation achieves a quantitative accuracy
comparable to the standard workflow, while also providing a
deeper understanding of the dominant patterns governing
e
-ph interactions. Principal-component analysis (PCA)
sheds light on the inherent compressibility of
e
-ph coupling
matrices. Recent interesting work on improving the effi-
ciency of
e
-ph calculations
[44,45]
is distinct in method and
scope from our data-driven approach.
II. RESULTS
A. Compression of
e
-ph
interactions
The key quantities in first-principles
e
-ph calculations
are the
e
-ph matrix elements
g
mn
ν
ð
k
;
q
Þ
, which represent the
probability amplitude for an electron in a band state
j
n
k
i
,
with band index
n
and crystal momentum
k
, to scatter into a
final state
j
m
k
þ
q
i
by emitting or absorbing a phonon with
mode index
ν
, wave vector
q
, energy
ω
ν
q
, and polarization
vector
e
ν
q
[46]
:
g
mn
ν
ð
k
;
q
Þ¼
ffiffiffiffiffiffiffiffiffiffi
2
ω
ν
q
s
X
κα
e
κα
ν
q
ffiffiffiffiffiffiffi
M
κ
p
h
m
k
þ
q
j
q
κα
V
j
n
k
i
;
ð
1
Þ
where
q
κα
V
P
p
e
i
q
R
p
p
κα
V
is the lattice-periodic
e
-ph
perturbation potential, given by the change in the DFT
Kohn-Sham potential with respect to the position of atom
κ
(with mass
M
κ
and located in unit cell at
R
p
) in the
Cartesian direction
α
. The inset in Fig.
1(a)
shows
schematically such an
e
-ph scattering process. We separate
the
e
-ph interactions into short- and long-ranged
[47
53]
:
g
mn
ν
ð
k
;
q
Þ¼
g
L
mn
ν
ð
k
;
q
Þþ
g
S
mn
ν
ð
k
;
q
Þ
:
ð
2
Þ
The long-range part
g
L
mn
ν
ð
k
;
q
Þ
includes dipole (Fröhlich) and
quadrupole contributions, which can be written analytically,
using classical electromagnetism, in terms of Born effective
charges and dynamical quadrupoles obtained from DFPT.
The short-ranged part
g
S
mn
ν
ð
k
;
q
Þ
cannot be written in closed
form and needs numerical quantum mechanics to be com-
puted, a consequence of the nearsightedness of electronic
matter
[54]
. Because
g
S
mn
ν
ð
k
;
q
Þ
is a smooth function of
electron and phonon momenta, it is short-ranged in a real-
space representation using a localized basis set suchas atomic
orbitals
[55]
or Wannier functions
[46,56]
.
The short-range
e
-ph coupling matrix in Wannier basis
g
κα
ij
ð
R
e
;
R
p
Þ
is obtained by transforming DFPT results
computed on a coarse momentum grid
ð
k
c
;
q
c
Þ
[46]
:
g
κα
ij
ð
R
e
;
R
p
Þ¼
1
N
k
c
N
q
c
X
mn
k
c
X
q
c
e
i
ð
k
c
R
e
þ
q
c
R
p
Þ
×
U
im
ð
k
c
þ
q
c
Þ
Δ
V
S
mn;
κα
ð
k
c
;
q
c
Þ
U
nj
ð
k
c
Þ
;
ð
3
Þ
where
U
is a unitary transformation from Bloch to Wannier
basis, and
Δ
V
S
mn;
κα
ð
k
c
;
q
c
Þ¼h
m
k
þ
q
j
q
κα
V
S
j
n
k
i
is the
short-ranged part of the perturbation potential in Bloch
basis. To separate acoustic and optical modes, we carry out
a rotation in atomic basis:
g
μα
ij
ð
R
e
;
R
p
Þ¼
X
κ
A
μ
κ
g
κα
ij
ð
R
e
;
R
p
Þ
;
ð
4
Þ
where
A
κ
μ
¼
exp
½
i
ð
2
π
=N
at
Þ
κμ

adds a relative phase to
different atoms in the unit cell, and
μ
ð
0
;
...
;N
at
1
Þ
labels phonon modes (
N
at
is the number of atoms in the unit
cell). This way,
μ
¼
0
corresponds to the acoustic sub-
space, where all the atoms in the unit cell move in phase,
and
μ
0
labels the optical modes. Here and below, we use
a collective index
F
¼ð
ij;
μα
Þ
to label Wannier orbital
pairs
ij
and phonon mode and direction
μα
, simplifying the
notation of the Wannier-basis
e
-ph matrices to
g
F
ð
R
e
;
R
p
Þ
.
When viewed as a matrix for each mode and orbital pair,
g
F
ð
R
e
;
R
p
Þ
decays rapidly with lattice vectors
R
e
and
R
p
and has a typical size
N
R
e
×
N
R
p
ranging between
10
2
×
10
2
and
10
3
×
10
3
. After carrying out SVD on
g
F
ð
R
e
;
R
p
Þ
,we
obtain
g
F
ð
R
e
;
R
p
Þ¼
X
γ
s
F
γ
u
F
γ
ð
R
e
Þ
v
F
γ

ð
R
p
Þ
;
ð
5
Þ
where
s
F
γ
is the singular value (SV) with index
γ
, and
u
F
γ
ð
R
e
Þ
and
v
F

γ
ð
R
p
Þ
are the left and right singular vectors, respec-
tively. One can interpret
s
F
γ
as the coupling strength between
the generalized electron cloud
P
R
e
u
F
γ
ð
R
e
Þ
c
i
ð
R
e
Þ
c
j
ð
0
Þ
and
phonon mode
P
R
p
v
F
γ

ð
R
p
Þ
(
b
μα
ð
R
p
Þþ
b
μα
ð
R
p
Þ
)
, where
ð
c
;c
Þ
are creation and annihilation operators for electrons
and
ð
b
;b
Þ
for phonons.Foreachchannel
F
,thereisa total of
LUO, DESAI, CHANG, PARK, and BERNARDI
PHYS. REV. X
14,
021023 (2024)
021023-2
min
ð
N
R
e
;N
R
p
Þ
SVs; we keep only the
N
c
largest ones,
resulting in a truncated, low-rank
e
-ph matrix
̃
g
:
̃
g
F
N
c
ð
R
e
;
R
p
Þ¼
X
N
c
γ
¼
1
s
F
γ
u
F
γ
ð
R
e
Þ
v
F
γ

ð
R
p
Þ
:
ð
6
Þ
This matrix can be conveniently transformed to momentum
space using
̃
g
F
N
c
ð
k
;
q
Þ¼
X
R
p
;
R
e
e
i
kR
e
þ
i
qR
p
̃
g
F
N
c
ð
R
e
;
R
p
Þ
¼
X
N
c
γ
¼
1
s
F
γ
u
F
γ
ð
k
Þ
v
F
γ

ð
q
Þ
;
ð
7
Þ
where
u
F
γ
ð
k
Þ¼
P
R
e
e
i
kR
e
u
F
γ
ð
R
e
Þ
and
v
F
γ

ð
q
Þ¼
P
R
p
e
i
qR
p
×
v
F
γ
ð
R
p
Þ
are singular vectors in momentum space. (Note that
the long-range part of the
e
-ph matrix is added after
interpolation ofthisshort-rangedpart.) Equation
(7)
provides
a generic parametrization of
e
-ph interactions, where by
increasing the number ofSVs one can systematically tune the
accuracy and computational cost. According to the Eckart-
Young-Mirskytheorem,thetruncatedmatrix
̃
g
obtainedfrom
SVD is an optimal low-rank approximation of
e
-ph inter-
actions, in the sense that it minimizes the Frobenius-norm
distance between the original and low-rank
e
-ph matrices
[57]
. From a computational viewpoint, Eq.
(7)
can greatly
accelerate the calculation of
e
-ph interactions and the
associated material properties, with a speedup by the inverse
fraction of SVs kept in the truncated
e
-ph matrix. In most
cases, we will keep only 1%
2% of SVs, resulting in a
50
100 times speedup for the key step in
e
-ph calculations
(see Appendix
A
for details).
B. Error and Pareto-optimal interactions
To test the accuracy of the truncated
e
-ph matrix and its
convergence with respect to the number of SVs (
N
c
), we
define a relative error for the
e
-ph matrix averaged over
electron bands and momenta, and phonon modes and wave
vectors:
ε
g
ð
N
c
Þ¼
P
mn
ν
;
kq
j
g
mn
ν
ð
k
;
q
Þ
̃
g
N
c
mn
ν
ð
k
;
q
Þj
2
P
mn
ν
;
kq
j
g
mn
ν
ð
k
;
q
Þj
2
;
ð
8
Þ
where
̃
g
N
c
mn
ν
ð
k
;
q
Þ
is the low-rank (approximate) and
g
mn
ν
ð
k
;
q
Þ
is the full first-principles
e
-ph matrix.
Figure
1(a)
shows this error as a function of the fraction
of SVs,
N
c
=N
R
p
, kept in the approximate matrix. In the
language of model selection
[57]
, the resulting curve of
error versus number of parameters is the Pareto frontier
for modeling
e
-ph interactions. We find that the error
decreases rapidly with the number of SVs
for example,
ε
g
is as low as 1% when using only 2% of SVs, which
achieves a
50
× compression of the original
e
-ph matrix.
This error curve defines a Pareto-optimal region, high-
lighted in Fig.
1(a)
, where
e
-ph calculations are both
accurate and parsimonious
[57]
. This region spans
1%
4% of SVs in most of our calculations
which
corresponds to keeping
N
c
10
50
SVs
and suggests
that many materials may possess only
10
dominant
elementary
e
-ph interaction patterns. Accordingly, the
e
-ph coupling strength for each phonon mode
[46,58]
,
D
ν
ð
q
Þ¼
1
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
2
ω
ν
q
M
uc
X
mn
j
g
mn
ν
ð
k
¼
Γ
;
q
Þj
2
=N
b
r
ð
9
Þ
(where
M
uc
is the mass of the unit cell and the band indices
m
and
n
run over
N
b
bands), shown in Fig.
1(b)
, can be
computed accurately using just the largest 1.5% of SVs,
matching closely results using the full
e
-ph matrix.
FIG. 1. (a) Error on the compressed
e
-ph matrix, computed
using Eq.
(8)
, as a function of the fraction of SVs used in the low-
rank approximation. The Pareto-optimal region is shown with a
shaded rectangle. (b) Mode-resolved
e
-ph coupling strength
computed using the full
e
-ph matrix (blue) and the low-rank
approximate matrix (orange) for silicon. The full
e
-ph matrix
elements are computed on a real-space grid with size
N
R
e
¼
1325
and
N
R
p
¼
1325
, the smallest values to achieve convergence,
setting the electron momentum to
k
¼
Γ
and using the
N
b
¼
3
highest valence bands. In the SVD calculation, we keep 20 out of
1325 SVs, corresponding to a
1
.
5%
fraction of SVs, as noted in
the legend.
DATA-DRIVEN COMPRESSION OF ELECTRON-PHONON
...
PHYS. REV. X
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C. Application to transport, spin,
and superconductivity
We showcase the accuracy of the low-rank approximate
e
-ph interactions by computing a wide range of material
properties, including charge mobility, spin relaxation,
phonon-assisted superconductivity, and phonon-induced
band renormalization. Figures
2(a)
and
2(b)
show the
electron and hole mobility in silicon for temperatures
between 100 and 400 K, obtained using the full
e
-ph
matrix and compared with SVD using 1.5% of the SVs (see
Appendix
B
). The mobility is overestimated for electrons,
and underestimated for hole carriers, despite the accuracy
of the low-rank
e
-ph interactions in silicon [Fig.
1(a)
]. The
error comes from the acoustic phonons, which interact
weakly with electrons
and therefore are ignored in the
low-rank
e
-ph matrix
but carry a considerable contribu-
tion to the mobility due to their large thermal occupation.
To improve the treatment of acoustic phonons, we develop
a constrained SVD (cSVD) which preserves the deforma-
tion potential
[59]
for long-wavelength acoustic phonons in
the compressed
e
-ph matrix (see Appendix
C
). When using
cSVD, the mobility computed using only 1.5% of the SVs
is nearly identical to the full-matrix result for both carriers.
We also apply the low-rank approximation to spin-
dependent
e
-ph matrices governing spin-flip
e
-ph interactions;
these matrices enable first-principles calculations of spin
relaxation times (SRTs) in centrosymmetric materials via
the Elliot-Yafet mechanism
[60]
(see Appendix
D
). The
SRTs for electrons in silicon between 150 and 400 K are
shown in Fig.
2(c)
. Our results from SVD with
N
c
¼
20
(corresponding to
1
.
5%
of the SVs) match closely the full
e
-ph matrix calculations and agree with experimental
results
[61,62]
. Different from charge transport, standard
SVD gives accurate SRTs in silicon because the optical
phonons govern spin-flip processes. For materials where
acoustic phonons contribute to spin relaxation, our
cSVD approach can be readily extended to the spin-
dependent case.
Calculations of phonon-mediated superconductivity, pre-
sented here using lead (Pb) as an example, can also leverage
our low-rank approximation (see Appendix
E
). Figure
2(d)
compares the Eliashberg spectral function
α
2
F
ð
ω
Þ
from full
e
-ph matrix calculations with SVD results; using only the
first
N
c
¼
5
SVs (here equal to 1.8% of the SVs) suffices to
reproduce the full calculation. We solve the isotropic
Eliashberg equation self-consistently (see Appendix
E
for details) and compute the superconducting gap
Δ
0
as
a function of temperature [Fig.
2(e)
] as well as the critical
temperature
T
c
versus number of SVs [inset of Fig.
2(e)
].
The low-rank
e
-ph matrix with
N
c
¼
5
SVs provides a gap
Electron
Hole
abc
def
(a)
(b)
(c)
(e)
(d)
(f)
FIG. 2. (a) Mobility of electrons in silicon and (b) mobility of hole carriers in silicon, computed with the full
e
-ph matrix
(
N
R
e
¼
N
R
p
¼
1325
) and compared with standard and constrained SVD, in both cases using 1.5% of the SVs. (c) Spin relaxation times
of electrons in silicon, computed with the full
e
-ph matrix (
N
R
e
¼
N
R
p
¼
1325
) and using SVD with 1.5% of the SVs. Experimental
data from Refs.
[61,62]
are shown for comparison. (d) Eliashberg spectral function
α
2
F
ð
ω
Þ
for Pb, comparing full
e
-ph matrix
(
N
R
e
¼
N
R
p
¼
279
) with SVD results using 1.8% of the SVs. (e) Superconducting gap
Δ
0
as a function of temperature, comparing full
e
-ph matrix results with SVD using 1.8% of the SVs. The inset shows the convergence of the critical temperature
T
c
with number of
SVs; the darker (lighter) colored regions indicate 5% (10%) error relative to the full calculation. (f) Band renormalization for electronic
states near the Dirac cone in graphene at 20 K, comparing the full calculation with SVD using 1.5% of the SVs.
LUO, DESAI, CHANG, PARK, and BERNARDI
PHYS. REV. X
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function in good agreement with the full-matrix calcula-
tion, which can be further improved by using a larger
fraction of SVs; the critical temperature for
N
c
¼
5
SVs is
very accurate;
T
c
¼
6
.
9
K which is within 5% of the
T
c
¼
6
.
6
K value obtained using the full
e
-ph matrix. This result
implies that as few as five elementary
e
-ph interactions
determine
T
c
in Pb. Finally, we compute band renormal-
ization from
e
-ph interactions
[63]
] focusing on the
contribution from the Fan-Migdal
e
-ph self-energy (see
Appendix
F
). The Debye-Waller term can also be added
following Ref.
[64]
. Results for graphene show that band
renormalization near the Dirac cone can be computed
keeping only the five largest SVs; this highly compressed
e
-ph matrix correctly predicts the kinks near the Dirac cone
and matches full
e
-ph matrix results over a 2 eV energy
range. We also carry out convergence tests with respect to
the fraction of SVs included in the calculation for all the
materials studied here (see the Supplemental Material
[65]
).
The rapid convergence with respect to the fraction of SVs
guarantees that the full
e
-ph matrix calculation is not
needed, and one can obtain accurate results by converging
the desired property with respect to the fraction of SVs with
minimal computational overhead.
While all the examples discussed above are for materials
with nonpolar bonds, polar materials are even simpler to
study with our compression method because the long-range
(Fröhlich) dipole contribution is dominant and is well
modeled by an analytic formula using Born effective
charges
[47
49]
. To illustrate this point, we demonstrate
accurate mobility calculations in GaAs and PbTiO
3
using
only 1% of the SVs (see the Supplemental Material
[65]
).
D. Computational speedup from compression
We illustrate the computational speedup achieved by our
compression method using the
e
-ph coupling constant
λ
in
doped monolayer MoS
2
as a case study
[66]
. Following
Ref.
[66]
, we employ a grid size of
288
2
k
and
q
points for
numerical integration and a Gaussain smearing of
0.002 Ry. We also leverage the improved Brillouin-zone
sampling technique where only electronic states in a small
energy window (0.006 Ry) near the Fermi surface are
included in the calculation. In Fig.
3(a)
, we show the
convergence of
λ
with respect to the fraction of SVs. The
shaded region corresponds to an accuracy greater than 95%
compared to the fully converged result. Similar to other
quantities computed in this work,
λ
converges rapidly with
the fraction of SVs; in particular, using only 1% of the SVs
gives
λ
within 2% of the converged result. Figure
3(b)
compares the computational wall time for the calculation
employing the full
e
-ph matrices and for our SVD
compression method with 1% SVs (note that both calcu-
lations use the same improved Brillouin-zone sampling
scheme). Our approach achieves a speedup by 38 times
relative to using the full
e
-ph matrices; if we count solely
the time for
e
-ph interpolation, the speedup is 83 times.
This example illustrates the 1
2 orders of magnitude
speedup deriving from compressing the
e
-ph matrices with
SVD. For a more detailed analysis of computational
complexity, see Appendix
A
.
E. Dominant modes and principal-component analysis
To understand the inherent compressibility of the
e
-ph
matrices, we analyze the SV spectrum in graphene and
silicon [Figs.
4(a)
and
4(b)
]. In both materials, the SVs
decay rapidly, dropping by 1
2 orders of magnitude from
the largest to the tenth largest SV. In principal-component
analysis
[57,67]
, this decay can be understood as a
consequence of high-variance generalized directions in
the
e
-ph matrix,
g
F
ð
R
e
;
R
p
Þ
, which capture the vast
majority of the physics, while other principal components
can be viewed as noise and neglected
[67]
. We carry out
PCA by treating each row of the matrix
g
F
ð
R
e
;
R
p
Þ
as a
feature vector, and find that the variance of the two leading
principal components is one order of magnitude greater
than for the tenth or following principal components,
(a)
(b)
4.6 h
0.12 h
(38 )
FIG. 3. (a)
e
-ph coupling constant
λ
in doped monolayer MoS
2
computed with our compression method using different fractions
of SV. The doping concentration is 0.22 electrons per formula
unit. The shaded region corresponds to an accuracy greater than
95% relative to the fully converged calculation. (b) Comparison
of the wall time for computing the
e
-ph coupling constant
λ
with
the full
e
-ph matrices and with our SVD compression technique
using 1% of the SVs. The
38
× speedup achieved by the SVD
compression is indicated in red font.
DATA-DRIVEN COMPRESSION OF ELECTRON-PHONON
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PHYS. REV. X
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indicating that most of the physical information is already
captured by the first few SVs [see the insets of Figs.
4(a)
and
4(b)
]. This analysis reveals that only a few atomic
vibrational patterns dominate
e
-ph coupling. Although
these dominant modes are not known
a priori
, they can
be learned efficiently with SVD. We also apply the PCA to
lead (see Fig. S4 in Supplemental Material
[65]
) and
observe a similar rapid decay of the SVs. We remark that
the dimensionality reduction is general
it occurs in all the
materials studied here, and it is associated to the rapid
decay of the SVs, which we view as a consequence of the
nearsightedness of electronic interactions.
We visualize the atomic vibrations with dominant
e
-ph
interactions by analyzing the vibrational singular vectors.
To that end, we introduce a modified SVD that includes
Wannier orbitals and phonon modes in the decomposition:
g
κα
ij
ð
R
e
;
R
p
Þ¼
X
γ
s
γ
̃
u
γ
ð
ij
R
e
Þ
̃
v

γ
ð
κα
R
p
Þ
:
ð
10
Þ
In this global SVD, the singular vectors
̃
u
depend only on
electron variables and
̃
v
only on phonon variables. This
way, the phonon singular vectors
̃
v

γ
ð
κα
R
p
Þ
can be inter-
preted as local vibrational modes (in the Wigner-Seitz cell
associated with the coarse grid
[46]
) and visualized to study
the dominant
e
-ph couplings. We show these singular
vectors for the two modes with largest SVs in graphene
and silicon in Figs.
4(c)
and
4(d)
, using arrows on each
atom, with length proportional to the singular vector
̃
v

γ
ð
κα
R
p
Þ
, to indicate the atomic displacements in the
modes obtained from SVD.
In graphene, where the electronic states consist of
p
z
orbitals centered on each carbon atom, the dominant mode
resembles a longitudinal optical phonon that brings the
p
z
orbitals closer together in the unit cell. The second-
strongest mode is a shear vibration resembling a transverse
optical phonon, which spreads over multiple unit cells
[Fig.
4(c)
]. For the other modes, we observe that the
vibrational pattern progressively delocalizes over multiple
unit cells for decreasing values of the SVs. In silicon, where
the electronic states consist of
sp
3
-like Wannier orbitals
oriented along the chemical bond directions, the two modes
with dominant
e
-ph coupling are associated with compres-
sion and stretching of the bonds [Fig.
4(d)
]. The intuition
gained from this mode analysis can aid the formulation of
model Hamiltonians in chemically and structurally com-
plex materials, where keeping only the dominant
e
-ph
interactions can provide effective models of transport and
(a)
(b)
(c)
(d)
Graphene
Silicon
FIG. 4. (a) Decay of the SVs in graphene and (b) decay of the SVs in silicon, shown by plotting the SVs referenced to the largest SV.
Here,
̃
s
i
refers to the SVs averaged over Wannier orbitals and vibrational modes,
̃
s
i
¼
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
P
F
ð
s
F
i
Þ
2
p
. The respective insets show the real
part of the second versus tenth principal components, obtained from the PCA of the
e
-ph matrices; in parentheses we give the fraction of
explained variance
[67]
,
̃
λ
i
¼
σ
2
i
=
P
i
σ
2
i
, where
σ
2
i
is the variance of the
i
th principal component. The red oval shows the standard
deviation of the corresponding principal components, obtained by dropping feature vectors with norm smaller than
10
3
×
̃
s
0
.
(c) Atomic vibrations associated with the dominant
e
-ph interactions in graphene, and (d) the same quantity in silicon, obtained by
analyzing the phonon singular vectors,
̃
v
ð
κα
R
p
Þ
in Eq.
(10)
, for the two largest SVs.
LUO, DESAI, CHANG, PARK, and BERNARDI
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polaron physics informed by first-principles calculations
[34,68
71]
.
III. DISCUSSION AND CONCLUSION
The accuracy of the low-rank
e
-ph matrices implies that
current brute-force first-principles calculations overpara-
metrize
e
-ph interactions, falling too far on the right side of
the Pareto-optimal region in Fig.
1(a)
. Conversely, textbook
approaches such as Holstein and Fröhlich models, which
use only a handful of
e
-ph couplings, may fall short of
achieving quantitative accuracy by using too few param-
eters. Our SVD compression in Wannier basis (followed by
interpolation) provides a systematic route to achieve
Pareto-optimal calculations. These optimal models enhance
interpretability and enable a deeper understanding because
they concentrate all the relevant
e
-ph physics in just a few
parameters
in our case, the leading SVs and singular
vectors, which represent dominant
e
-ph interactions.
In summary, our results unveil the hidden low-
dimensional nature of
e
-ph interactions. While accurate,
current first-principles calculations overparametrize these
interactions due to a lack of
a priori
knowledge of the
dominant atomic vibrational patterns governing
e
-ph cou-
pling. We have shown that when this optimal representation
is achieved via SVD, using only 10
20 parameters (for each
orbital pair and vibrational mode) is sufficient to obtain
results with state-of-the-art accuracy. Surprisingly, this is
only a small fraction (1%
2%) of the typical size of first-
principles
e
-ph matrices. Compressing
e
-ph interactions
significantly accelerates calculations of material properties
ranging from transport to spin relaxation to superconduc-
tivity. Future work will extend these ideas to other electronic
interactions, with the goal of advancing
precise but parsi-
monious
quantummany-body calculations inreal materials.
Our approach works equally as well for small systems with a
few atoms and for large systems with tens of atoms in the unit
cell (see Fig. S5 in Supplemental Material
[65]
). In addition,
as we plan to show elsewhere, our method enables many-
body
e
-ph calculations that are currently inaccessible with
standard Wannier interpolation, including the development
of first-principles diagrammatic Monte Carlo simulations,
which sum
e
-ph diagrams to all orders from first principles,
thus providing a gold standard for quantitative
e
-ph studies.
ACKNOWLEDGMENTS
Y. L. thanks Ivan Maliyov and Junjie Yang for fruitful
discussions. This work was supported by the National
Science Foundation under Grant No. OAC-2209262. This
research used resources of the National Energy Research
Scientific Computing Center (NERSC), a U.S. Department
of Energy Office of Science User Facility located at
Lawrence Berkeley National Laboratory, operated under
Contract No. DE-AC02-05CH11231.
APPENDIX A: COMPUTATIONAL
COMPLEXITY ANALYSIS
From a computational viewpoint, Eq.
(7)
can greatly
accelerate the calculation of
e
-ph interactions and the asso-
ciated material properties. The key bottleneck in these
calculations is obtaining the
e
-ph matrix elements on fine-
momentum grids,
g
mn
ν
ð
k
f
;
q
f
Þ
, starting from the Wannier
representation, with a cost scaling as
O
ð
N
R
p
N
k
f
N
q
f
Þ
for an
optimal implementation
[46]
(for a fixed number of Wannier
functions and atoms in the unit cell), where
N
k
f
and
N
q
f
are
the number of points in the fine-momentum electron and
phonon grids, with typical values of order
N
k
f
N
q
f
10
6
.
In contrast, when using SVD, this interpolationstep costs only
O
ð
N
c
N
k
f
N
q
f
Þ
, with a speedup by a factor
N
R
p
=N
c
,the
inverse fraction of SVs kept in the truncated
e
-ph matrix. In
most cases, we will keep only 1%
2% of SVs, resulting in a
50
100 times speedup for the key step in
e
-ph calculations.
We show specific timing comparisons for all the materials
studied in this work in Fig. S1 of the Supplemental Material
[65]
. Inall cases,our algorithm achieves a speedup close to the
ideal value of
N
R
p
=N
c
. The memory improvement is also
dramatic. A convergedtransportcalculationin siliconrequires
a
k
grid of
100
3
and
q
grid of
50
3
points
[46]
; on these fine
grids, the memory required to store the entire
e
-ph matrix
g
mn
ν
ð
k
f
;
q
f
Þ
is 700 TB, while the memory needed to store the
singular vectors
u
F
γ
ð
k
f
Þ
and
v
F
γ
ð
q
f
Þ
is only 128 GB when we
retain 1.5% of SVs, which guarantees accurate results as we
show in Figs.
2(a)
and
2(b)
. This efficiency removes the key
bottleneck in first-principles
e
-ph calculations.
APPENDIX B: MOBILITY CALCULATIONS
The first-principles mobility calculations in silicon
follows our previous work
[51]
. We include the quadrupole
contribution analytically for silicon. The quadrupole tensor
can be written as
Q
Si
;
αβγ
¼ð
1
Þ
κ
þ
1
Q
Si
j
ε
αβγ
j
;
ð
B1
Þ
where
ε
αβγ
is the Levi-Civita tensor and the value of
Q
Si
¼
13
.
67
is taken from Refs.
[72,73]
.
We compute the phonon-limited mobility at temperature
T
using the Boltzmann transport equation (BTE) in the
relaxation time approximation
[46]
. We first obtain the
e
-ph
scattering rate
Γ
n
k
using Fermi
s golden rule, which is
equivalent to using the imaginary part of the lowest-order
e
-ph self-energy
[74]
:
Γ
n
k
¼
2
π
1
N
q
X
m
ν
q
j
g
mn
ν
ð
k
;
q
Þj
2
×
½ð
N
ν
q
þ
1
f
m
k
þ
q
Þ
δ
ð
ε
n
k
ε
m
k
þ
q
ω
ν
q
Þ
þð
N
ν
q
þ
f
m
k
þ
q
Þ
δ
ð
ε
n
k
ε
m
k
þ
q
þ
ω
ν
q
Þ
;
ð
B2
Þ
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