CaltechAUTHORS
Published September 1989 | Version public
Journal Article Metadata-only

Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C

Creators

Abstract

Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been studied by transmission electron microscopy. The results for (Ga, In)As, similar to earlier findings for Si and Ge, provide the basis for a proposed model for recovery processes. The observed structures together with their mechanical properties indicate that the role of In is consistent with an athermal contribution to the frictional stress arising from a solid-solution-hardening effect.

Additional Information

© 1989 Taylor & Francis. [Received 9 June 1988 and accepted 31 October 1988] The authors are grateful for the support of this work by the Defense Advance Research Project Agency (DARPA) (U.S. Department of Defense), Order 5526, monitored by the U.S. Air Force Office of Scientific Research under Contract F49620-85-C-0129, and for the provision of materials for this research by Dr Shaun McGuigan of Materials Growth and Device Technology Group, Westinghouse R&D Center under contract N00014-84-C-0632 with DARPA.

Additional details

Identifiers

Eprint ID
49447
DOI
10.1080/01418618908213866
Resolver ID
CaltechAUTHORS:20140908-181330183

Related works

Describes
10.1080/01418618908213866 (DOI)

Funding

Defense Advanced Research Projects Agency (DARPA)
5526
Air Force Office of Scientific Research (AFOSR)
F49620-85-C-0129
Defense Advanced Research Projects Agency (DARPA)
N00014-84-C-0632

Dates

Created
2014-09-11
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Updated
2021-11-10
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