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Published 2012 | public
Book Section - Chapter

Silicon Etching and Etch Techniques for NEMs and MEMs


Fabrication of precision micro- and nanoscale structures in silicon demands exacting control over pattern transfer during etching. The most utilized method to enable this pattern transfer anisotropically is plasma etching with an inductively couple plasma reactive ion etcher. When properly used, these machines can etch high-aspect-ratio structures in silicon that are hundreds of microns in height to tens of nanometers in width. The work presented here will detail how to tune parameters associated with a plasma etcher and manipulate the gas chemistry to achieve and control anisotropic silicon etches at both micro- and nanoscale. Etch masks that ensure a high pattern transfer fidelity and complement the gas chemistries employed here will also be detailed. Finally several etching techniques that use the principles detailed to fabricate extraordinary structures in silicon will be described.

Additional Information

© 2013 CRC Press. M. David Henry gratefully acknowledges the Fannie and John Hertz Foundation for support. Both authors gratefully acknowledge the support and infrastructure provided for this work by the Kavli Nanoscience Institute at the California Institute of Technology. They also acknowledge and thank Andrew Homyk, Mike Shearn, and Sameer Walavalkar for all their contributions. This work was funded in part by grants from DARPA under both EPIC (HR0011-04-1-0054) and NACHOS (W911NF-07-0277).

Additional details

August 19, 2023
March 5, 2024