Published February 26, 2014
| Version Supplemental Material
Journal Article
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Bandgap Tunability in Zn(Sn,Ge)N_2 Semiconductor Alloys
Creators
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1.
California Institute of Technology
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2.
Joint Center for Artificial Photosynthesis
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3.
Lawrence Berkeley National Laboratory
Abstract
ZnSn_(1-x)Ge_xN_2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN_2) to 3.1 eV (ZnGeN_2) by control of the Sn/Ge ratio.
Additional Information
© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: September 5, 2013. Article first published online: 5 Dec. 2013. This material is based upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993, and was also supported by the Dow Chemical Company. P.N. acknowledges support from a National Science Foundation Graduate Research Fellowship and from the Resnick Sustainability Institute. X-ray spectroscopy work was performed at the Advanced Light Source (ALS, BL 10.3.2 and 7.0.1), Berkeley, under Contract DE-AC02–05CH11231. The authors thank Drs. Jinghua Guo and Per-Anders Glans-Suzuki for their support at BL 7.0.1.Attached Files
Supplemental Material - adma201304473-sup-0001-S1.pdf
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Additional details
Identifiers
- Eprint ID
- 42895
- DOI
- 10.1002/adma.201304473
- Resolver ID
- CaltechAUTHORS:20131209-100236108
Funding
- Department of Energy (DOE)
- DE-SC0004993
- Dow Chemical Company
- NSF Graduate Research Fellowship
- Resnick Sustainability Institute
- Department of Energy (DOE)
- DE-AC02-05CH11231
Dates
- Created
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2013-12-11Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field