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Published October 1, 1990 | Published
Book Section - Chapter Open

Microfabrication below 10 nm


We describe a new electron beam lithography method for producing structures with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/AlGaAs, InGaAs/GaAs and InGaAs/InP quantum well heterostructures using chemically assisted ion beam etching, thereby forming uniform arrays of pillars with lateral dimensions at or below 10 nm. To correlate the sizes of such structures with our exposure and development conditions, reflection electron microscopy observations are used.

Additional Information

© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors wish to thank J.P. Harbison and R.J. Bhat for growing the GaAs/AlGaAs and InGaAs/InP structures. This work was partially supported by by the U.S. Army under contract DAAL01-89-C-0900.

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