Published November 1987
| Version Published
Journal Article
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Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers
Abstract
In this report, we summarize the important aspects of the deposition behavior of RuOz and Mo-O films formed by radio frequency (rf) reactive sputtering and their diffusion barrier properties against interdiffusion in Al-Si couples.
Additional Information
© 1987 American Vacuum Society. (Received 15 June 1987; accepted 3 August 1987) The authors gratefully acknowledge the financial support from the Army Research Office under Contract No. DAAG29-85-K-0192, and Intel Corporation.Attached Files
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Additional details
Identifiers
- Eprint ID
- 11679
- Resolver ID
- CaltechAUTHORS:SOFjvstb87
Funding
- Army Research Office
- DAAG29-85-K-0192
- Intel Corp.
Dates
- Created
-
2008-09-18Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field