Published May 15, 1983
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Journal Article
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Short cavity InGaAsP/InP lasers with dielectric mirrors
Abstract
Short cavity length (38 µm) lasers have been fabricated using a recently developed microcleavage technique. SiO2-amorphous Si multilayer coatings have been evaported on the lasers to obtain high reflectivity mirrors. The lasers have current thresholds as low as 3.8 mA with 85% reflecting front mirror and high reflectivity rear mirror and 2.9 mA with two high reflectivity mirrors. Single longitudinal mode operation is observed over a wide range of driving currents and temperatures.
Additional Information
© 1983 American Institute of Physics. Received 13 December 1982; accepted 1 February 1983. This work was supported by the Office of Naval Research and the Air Force Office of Scientific Research.Files
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- CaltechAUTHORS:KORapl83
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2008-02-13Created from EPrint's datestamp field
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