Lattice-matched heterostructures as Schottky barriers: HgSe/CdSe
Creators
Abstract
A novel structure, which is both a lattice-matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of (111) oriented HgSe on (0001) oriented CdSe. Hydrogen transport CVD is used, with a HgSe source temperature of 420°C and a CdSe substrate temperature of 330°C. Single crystal growth was obtained. Of the two orientations possible for the crystal symmetries involved, only one was observed for a given specimen. The ''Schottky barrier'' height for this lattice-matched heterostructure is 0.73±0.02 eV as measured by the photoresponse method. This uncertainty is substantially less than is usual for Schottkies. The magnitude is greater by about one-quarter volt than is achievable with the most electronegative elemental metal, Au, in qualitative agreement with work function arguments.
Additional Information
© 1979 American Vacuum Society. Received 26 February 1979; accepted 24 May 1979. The authors wish to thank T.F. Kuech, T.C. McGill, and R.A. Scranton for discussions; L. Tutt for help with the crystal growth; and S.S. Lau for performing the channel measurements. This work was supported in part by the Office of Naval Research (L. Cooper). [J.S.B. was a] National Science Foundation Graduate Fellow.Attached Files
Published - BESjvst79.pdf
Files
BESjvst79.pdf
Files
(1.8 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:c2ddac2766c34cc65c6955f82117fb01
|
1.8 MB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 11278
- Resolver ID
- CaltechAUTHORS:BESjvst79
Funding
- Office of Naval Research
- National Science Foundation
Dates
- Created
-
2008-07-29Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field