The role of Ga-droplet formation in nanometer-scale GaAs cluster synthesis from organometallic precursors

Recently we demonstrated the formation of crystalline nanometer scale GaAs clusters from organometallic precursors using an aerosol process derived from organometallic vapor phase epitaxy (OMVPE) [P. C. Sercelet al., Appl Phys. Lett.61, 696 (1992)]. Here, we explore the influence of precracking the Ga precursor (trimethyl-gallium), forming nanometer scale Ga droplets, prior to introduction of AsH3 to the reaction. We find the GaAs clusters so formed have an entirely different morphology than do those formed when the reactants are pre-mixed prior to reaction. This data supports our earlier contention that homogeneous nucleation is the dominant reaction mechanism for the formation of the clusters.