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Published December 2011 | Supplemental Material
Journal Article Open

Bottom-up Photonic Crystal Lasers


The directed growth of III–V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal–organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of ~625 W/cm^2. Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.

Additional Information

© 2011 American Chemical Society. Received: August 30, 2011 Revised: November 8, 2011. Publication Date (Web): November 18, 2011. The authors gratefully acknowledge support from Dr. Gernot Pomrenke and Dr. Kitt Reinhardt of the Air Force Office of Scientific Research (Grant FA9550-08-1-0198), (Grant FA9550-09-1-0270), the National Science Foundation (Grant ECCS-0824273), (Grant DMR-1007051), and the United States Department of Defense (Grant NSSEFF N00244-09-1-0091). J.N.S. acknowledges support from the NSF Clean Energy for Green Industry IGERT (Grant DGE-0903720). Caltech authors would like to acknowledge support fromtheDefense Advanced Research Projects Agency under the Nanoscale Architecture for Coherent Hyperoptical Sources program (Grant W911NF-07-1-0277).

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Supplemental Material - nl2030163_si_001.pdf


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