CaltechAUTHORS
Published June 2015 | Version public
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Fabrication and Characterization of ZnSn_xGe_(1-x)N_2 Alloys for Light Absorbers

Creators

  • 1. ROR icon California Institute of Technology

Abstract

The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSn_xGe_(1-x)N_2. The sputtered thin-films show potential for ZnSn_xGe_(1-x)N_2 to be tunable semiconductor photovoltaic absorber materials.

Additional Information

© 2015 IEEE. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project. We also thank the Joint Center for Artificial Photosynthesis and the Molecular Materials Research Center at Caltech for instrument access.

Additional details

Additional titles

Alternative title
Fabrication and Characterization of ZnSnxGe1-xN2 Alloys for Light

Identifiers

Eprint ID
63187
DOI
10.1109/PVSC.2015.7355918
Resolver ID
CaltechAUTHORS:20151223-115056420

Related works

Describes
10.1109/PVSC.2015.7355918 (DOI)

Funding

Dow Chemical Company

Dates

Created
2015-12-23
Created from EPrint's datestamp field
Updated
2021-11-10
Created from EPrint's last_modified field