Published August 1, 1983
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Journal Article
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Carrier leakage and temperature dependence of InGaAsP lasers
Abstract
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.
Additional Information
Copyright © 1983 American Institute of Physics. Received 3 March 1983; accepted 3 May 1983. This work was supported by the Office of Naval Research and the National Science Foundation.Files
CHEapl83c.pdf
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- 9906
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- CaltechAUTHORS:CHEapl83c
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2008-03-26Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field