Studies of silicon photoelectrochemical cells under high injection conditions

The behavior of Si/CH₃OH-dimethylferrocene^(+/0) junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm² for samples with an n⁺-diffused back region, point contacts on the back surface, and with a base of thickness 390 µm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8 ± 0.1 and (2.6 ± 1.5) × 10⁻⁸ A/cm², respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH₃OH interface.