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Published July 1, 1965 | public
Journal Article Open

Amorphous Phase in Palladium—Silicon Alloys


By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys containing 15 to 23 at.% Si. This phase is stable at room temperature and crystallization cannot be detected after one month at 250°C. With rates of heating greater than 20°C/min, rapid crystallization takes place at 400°C, with a heat release of approximately 1000 cal/mole. The electrical resistivity of an alloy containing 17 at.% Si at room temperature is 2.6 times that of the equilibrium alloy. The resistivity decreases linearly with decreasing temperature and is about 95% of the room-temperature value at 2°K. Various factors involved in the retention of amorphous phases in rapidly quenched liquid alloys are discussed.

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©1965 The American Institute of Physics (Received 5 January 1965) Work supported by the U.S. Atomic Energy Commission.


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