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Published February 10, 2010 | public
Journal Article

Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics


In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

Additional Information

© 2010 Institute of Physics and IOP Publishing Limited. Print publication: Issue 6 (10 February 2010); received 5 November 2009; in final form 14 December 2009; published 8 January 2010. The authors gratefully acknowledge support (EEC-0812072) from the National Science Foundation (NSF) through the Engineering Research Center for Integrated Access Networks (CIAN). The Caltech authors acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. The Tucson group also acknowledges support from NSF Atomic Molecular and Optical Physics (AMOP) and Electronics, Photonics and Device Technologies (EPDT), AFOSR, and Arizona Technology and Research Initiative Funding (TRIF). HMG thanks the Alexander von Humboldt Foundation for a Renewed Research Stay.

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