Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published January 2002 | Published
Book Section - Chapter Open

Residual stress in thin-film parylene-C


This paper reports the influence of thermal annealing on the residual stress in parylene-c thin-films on silicon. Although recently others have used the diaphragm bulge testing method to measure the residual stress in parylene, this is the first extensive study of residual stress in parylene using the load-deflection method and rotating tip strain gages. This paper supports the hypothesis that stress is relaxed in parylene-c films at elevated temperatures (>100°C) and that thermal stress accounts for 90% of the residual stress in films that have undergone annealing at these elevated temperatures. It was found that this held true up to 180°C which is above the glass transition temperature of the material.

Additional Information

© 2002 IEEE. Meeting Date: 20 Jan 2002-24 Jan 2002; Date of Current Version: 07 August 2002. This work is supported by the NSF Center for Neuromorphic Systems Engineering (CNSE) at Caltech.

Attached Files

Published - HARmems02.pdf


Files (528.5 kB)
Name Size Download all
528.5 kB Preview Download

Additional details

August 19, 2023
January 13, 2024