Published November 11, 2002 | Version Published
Journal Article Open

Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems

Abstract

We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence of a constant dc sense current. The high mobility of the incorporated 2DEG provides low-noise, low-power, and high-gain electromechanical displacement sensing through combined piezoelectric and piezoresistive mechanisms.

Additional Information

© 2002 American Institute of Physics. (Received 7 March 2002; accepted 30 August 2002) We gratefully acknowledge support from DARPA, through Grant No. DABT63-98-1-0012, and the NSF via grant ECS-0089061. We also thank F. G. Monzon and J. Casey for early contributions to this work, and J. Y. T. Yang and K. Cooper for help with the low temperature amplifier.

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Additional details

Identifiers

Eprint ID
3272
Resolver ID
CaltechAUTHORS:TANapl02

Funding

Defense Advanced Research Projects Agency (DARPA)
DABT63-98-1-0012
NSF
ECS-0089061

Dates

Created
2006-05-25
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Updated
2021-11-08
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