Gas-Surface Dynamics and Profile Evolution during Etching of Silicon
Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.
Additional Information© 1996 The American Physical Society Received 2 May 1996 This work was supported by Sematech under Contract No. 75017492 and by the Ballistic Missile Defense Organization/ISTO. K. P. G. thanks the Camille and Henry Dreyfus Foundation for a New Faculty Award.
Published - HWAprl96.pdf