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Published September 6, 1993 | Published
Journal Article Open

In situ reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy


In situ analysis of hydrocarbon desorption from hydrogen terminated Si(100) surfaces was performed in a silicon molecular beam epitaxy system, using reflection electron energy loss spectroscopy, in conjunction with conventional reflection high energy electron diffraction analysis. Measurements of C K edge core loss intensities demonstrate that this method is sufficiently sensitive to enable in situ analysis of hydrocarbon desorption at fractional monolayer coverages during low-temperature isothermal anneals. Hydrocarbon desorption was found to begin at 115 °C, and at 200 °C complete desorption occurred within 10 min. Hydrocarbon coverage was not measurably affected by operation of ionization gauge filaments during low temperature anneals, but was increased by transient outgassing of the sample holder, and its environs.

Additional Information

© 1993 American Institute of Physics (Received 28 September 1992; accepted 2 July 1993) This work was supported by grants from NSF (DMR-9202587) and the Caltech Consortium in Chemistry and Chemical Engineering. Use of x-ray photoelectron spectroscopy facilities of the Beckman Institute at Caltech and technical assistance of A. P. Rice is gratefully acknowledged.

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