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Published August 15, 1978 | Published
Journal Article Open

Q-switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers


Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess morphological and electrical properties which are superior to those formed by conventional alloying.

Additional Information

© 1978 American Institute of Physics. Received 17 March 1978; accepted for publication 5 June 1978. We wish to acknowledge fruitful discussions with Professors Pol E. Duwez and William L. Johnson. One of us (DMP) is grateful for the support granted by the Hughes Aircraft Company. Also, the support of the Weizmann Institute (for DF) is gratefully acknowledged.

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