Published November 21, 1988
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Journal Article
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Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system
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Abstract
A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1–x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.
Additional Information
© 1988 American Institute of Physics. Received 4 May 1988; accepted for publication 14 September 1988. The authors would like to express their appreciation to Hadis Morkoc and Lars Eng for many helpful discussions. This work was supported by the Office of Naval Research and by Caltech's Program in Advanced Technologies, sponsored by Aerojet General, General Motors, and TRW.Files
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- 7486
- Resolver ID
- CaltechAUTHORS:HOEapl88
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2007-02-28Created from EPrint's datestamp field
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