Published October 1, 1975
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Journal Article
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cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K
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Abstract
Distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm^2 at 170 K and 3.5 kA/cm^2 at 300 K.
Additional Information
Copyright © 1975 American Institute of Physics Received 17 June 1975; in final form 22 July 1975 The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of the Central Research Laboratory, Hitachi, Ltd., for their support in this work. They are also grateful to S. Yamashita of the same laboratory for his extensive assistance in diode preparation and scanning microscope measurements.Files
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2006-10-09Created from EPrint's datestamp field
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