Published December 15, 1983
| Version Published
Journal Article
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Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO_2
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1.
Massachusetts Institute of Technology
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2.
MIT Lincoln Laboratory
Abstract
We describe a method of controlling the in-plane <100> directions of grains in (100)-textured silicon films produced by zone-melting recrystallization over amorphous SiO2. Grains having in-plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.
Additional Information
© 1983 American Institute of Physics (Received 9 May 1983; accepted 26 September 1983) This work was supported by the Office of Basic Sciences, U.S. Department of Energy. The Lincoln Laboratory portion of this work was sponsored in part by the Defense Advanced Research Projects Agency. The authors are grateful to R. W. Mountain and C. L. Doherty who provided the substrates and P. Leach, who helped in the etch-pit analysis.Attached Files
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Identifiers
- Eprint ID
- 2830
- Resolver ID
- CaltechAUTHORS:ATWapl83
Funding
- Department of Energy (DOE)
- Department of Energy (DOE)
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2006-04-28Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field