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Published December 2005 | public
Journal Article Open

Analysis of the Tuning Sensitivity of Silicon-on-Insulator Optical Ring Resonators


High-quality-factor optical ring resonators have recently been fabricated in thin silicon-on-insulator (SOI). Practical applications of such devices will require careful tuning of the precise location of the resonance peaks. In particular, one often wants to maximize the resonance shift due to the presence of an active component and minimize the resonance shift due to temperature changes. This paper presents a semianalytic formalism that allows the prediction of such resonance shifts from the waveguide geometry. This paper also presents the results of experiments that show the tuning behavior of several ring resonators and find that the proposed semianalytic formalism agrees with the observed behavior.

Additional Information

© Copyright 2005 IEEE. Reprinted with permission. Manuscript received August 23, 2004; revised May 13, 2005. This work was supported in part by the Defense Advanced Projects Research Administration contract N00421-02-D-3223 under the Chip-Scale Wavelength Division Multiplexing program.


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