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Published September 1, 2011 | public
Journal Article

Wafer-Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers


The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained In_(x)Ga_(1-x)As ultrathin films from InP substrates to a handle support results in full strain relaxation and the In_(x)Ga_(1-x)As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.

Additional Information

© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: April 7,2011; revised: June 10, 2011; published online: July 19,2011. The authors acknowledge J. Kornfield, J. N. Munday, and the US Department of Energy Solar Energy Technologies Program under grant DE-FG36-08GO18071 for financial support. This work benefited from use of the Caltech Materials Science TEM facility which is partially supported by the MRSEC Program of the National Science Foundation under Award Number DMR-0520565. The authors gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. Rheology measurements were performed at the UCSB MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under award No. DMR05-20415. The authors have a non-provisional patent related to this work.

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