Published February 15, 1966
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Voltage Dependence of Barrier Height in AIN Tunnel Junctions
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Abstract
We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of applied voltage and insulator thickness. These results are in disagreement with currently accepted theories based upon image potential and/or field penetration of the electrodes.
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© 1966 The American Institute of Physics. Received 4 November 1965; in final form 20 January 1966.Attached Files
Published - 1.1754505.pdf
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