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Published January 11, 2010 | Supplemental Material + Published
Journal Article Open

Fully inverted single-digit nanometer domains in ferroelectric films


Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.^2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.^2 data storage densities

Additional Information

© 2010 American Institute of Physics. Received 6 November 2009; accepted 5 December 2009; published 12 January 2010. Part of Y.Z.'s work was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Attached Files

Published - Tayebi2010p7046Appl_Phys_Lett.pdf

Supplemental Material - Supplementary_information_APL_format.pdf


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