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Published October 13, 2003 | public
Journal Article Open

Photoresist-free printing of amorphous silicon thin-film transistors


Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive. This letter describes transistor fabrication by a photoresist-free approach in which polymer etch masks are letterpress printed from flexible polyimide stamps. Pattern registration is achieved through optical alignment since the printed masks are thin and optically transparent. This modified fabrication scheme produces transistor performance equivalent to conventionally fabricated a-Si TFTs. The ability to directly print etch masks onto nonhomogeneous substrates brings one step closer the realization of flexible, large-area, macroelectronic fabrication.

Additional Information

©2003 American Institute of Physics. (Received 26 June 2003; accepted 16 August 2003) The authors gratefully acknowledge support from the DARPA Molecular Level Printing Program, the New Jersey Commission on Science and Technology, the US Army TACOM-ARDEC, and the Eastman Kodak Corporation through a graduate fellowship for one of the authors (S.M.M.).


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September 13, 2023
October 23, 2023