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Published May 2006 | Published
Book Section - Chapter Open

Design approaches and materials processes for ultrahigh efficiency lattice mismatched multi-junction solar cells


In this study, we report synthesis of large area (>2cm^2), crack-free GaAs and GaInP double heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also reported for GaInP top cells. These samples were grown on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. The double heterostructures exhibit radiative emission with uniform intensity and wavelength in regions not containing interfacial bubble defects. The minority carrier lifetime of ~1ns was estimated from photoluminescence decay measurements in both double heterostructures. We also report on the structural characteristics of heterostructures, determined via atomic force microscopy and transmission electron microscopy, and correlate these characteristics to the spatial variation of the minority carrier lifetime.

Additional Information

© 2006 IEEE. Issue Date: May 2006. Date of Current Version: 15 January 2007. The authors would like to acknowledge W. Metzger for measuring the time-resolved photoluminescence spectra, C. Garland for her assistance in the TEM work, and R. Walters for his assistance with the photoluminescence intensity measurements. Funding for this work was provided by the National Renewable Energy Laboratory. M. Griggs acknowledges fellowship support from the National Science Foundation.

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August 19, 2023
October 23, 2023