Published October 2022 | Version public
Journal Article

High-efficiency and broadband on-chip electro-optic frequency comb generators

  • 1. ROR icon Harvard University
  • 2. ROR icon University of Southern California
  • 3. ROR icon Stanford University
  • 4. ROR icon California Institute of Technology

Abstract

Developments in integrated photonics have led to stable, compact and broadband comb generators that support a wide range of applications including communications, ranging, spectroscopy, frequency metrology, optical computing, and quantum information. Broadband optical frequency combs can be generated in electro-optical cavities, where light passes through a phase modulator multiple times while circulating in an optical resonator. However, broadband electro-optic frequency combs are currently limited by low conversion efficiencies. Here we demonstrate an integrated electro-optic frequency comb with a conversion efficiency of 30% and an optical span of 132 nm, based on a coupled-resonator platform on thin-film lithium niobate. We further show that, enabled by the high efficiency, the device acts as an on-chip femtosecond pulse source (336 fs pulse duration), which is important for applications in nonlinear optics, sensing and computing. As an example, in the ultrafast and high-power regime, we demonstrate a frequency comb with simultaneous electro-optic and third-order nonlinearity effects. Our device paves the way for practical optical frequency comb generators and provides a platform to investigate new regimes of optical physics that simultaneously involve multiple nonlinearities

Additional Information

We thank C. Wang for helpful discussion. This work is supported by AFOSR FA9550-19-1-0376 (A.S.-A.); AFOSR FA9550-19-1-0310 (A.S.-A. and Y.H.); DARPA LUMOS HR0011-20-C-137 (M.Y., L.S., R.C. and M.L.); NASA 80NSSC21C0583 (M.Y. and R.C.); AFRL FA9550-21-1-0056 (N.S.); NSF ECCS-1839197 (D.Z.); ARO W911NF2010248 (Y.H.); DOE DE-SC0020376 (N.S. and M.L.); Harvard Quantum Initiative (HQI) postdoc fellowship (D.Z.); Maxim Integrated (now Analog Devices) (B.B. and J.M.K.); and Inphi (now Marvell) (B.B. and J.M.K.). N.S. acknowledges support by the AQT Intelligent Quantum Networks and Technologies (INQNET) research program. Device fabrication was performed at the Harvard University Center for Nanoscale Systems. The views, opinions and/or findings expressed are those of the author and should not be interpreted as representing the official views or policies of the Department of Defense or the US Government.

Additional details

Identifiers

Eprint ID
116748
Resolver ID
CaltechAUTHORS:20220907-386750000

Funding

Air Force Office of Scientific Research (AFOSR)
FA9550-19-1-0310
Air Force Office of Scientific Research (AFOSR)
FA9550-19-1-0376
Army Research Office (ARO)
W911NF2010248
NASA
80NSSC21C0583
Defense Advanced Research Projects Agency (DARPA)
HR0011-20-C-137
Air Force Research Laboratory (AFRL)
FA9550-21-1-0056
Department of Energy (DOE)
DE-SC0020376
NSF
ECCS-1839197
Harvard University
Maxim Integrated
Inphi
AQT Intelligent Quantum Networks and Technologies (INQNET)

Dates

Created
2022-11-15
Created from EPrint's datestamp field
Updated
2022-11-15
Created from EPrint's last_modified field

Caltech Custom Metadata

Caltech groups
INQNET