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Published May 15, 1984 | public
Journal Article Open

Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode


A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.

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Copyright © 1984 American Institute of Physics (Received 9 January 1984; accepted 27 February 1984) This research was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory.


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