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Article
Published in partnership with the Shanghai Institute of Ceramics of the Chinese Academy of Sciences
https://doi.org/10.1038/s41524-024-01308-4
Dynamic mode decomposition of
nonequilibrium electron-phonon
dynamics: accelerating the
fi
rst-
principles real-time Boltzmann equation
Check for updates
Ivan Maliyov
1
, Jia Yin
2
, Jia Yao
1,3
,ChaoYang
2
& Marco Bernardi
1,3
Nonequilibrium dynamics governed by electron
phonon (
e
-ph) interactions plays a key role in
electronic devices and spectroscopies and is central to understanding electronic excitations in
materials. The real-time Boltzmann transport equation (rt-BTE) with collision processes computed
from
fi
rst principles can describe the coupled dynamics of electrons and atomic vibrations (phonons).
Yet, a bottleneck of these simulations is the calculation of
e
ph scattering integrals on dense
momentum grids at each time step. Here we show a data-driven approach based on dynamic mode
decomposition (DMD) that can accelerate the time propagation of the rt-BTE and identify dominant
electronic processes. We apply this approach to two case studies, high-
fi
eld charge transport and
ultrafast excited electron relaxation. In both cases, simulating only a short time window of ~10% of the
dynamics suf
fi
ces to predict the dynamics from initial excitation to steady state using DMD
extrapolation. Analysis of the momentum-space modes extracted from DMD sheds light on the
microscopic mechanisms governing electron relaxation to a steady state or equilibrium. The
combination of accuracy and ef
fi
ciency makes our DMD-based method a valuable tool for
investigating ultrafast dynamics in a wide range of materials.
First-principles calculations are
widely employed for modeling and
designing materials, with applications ranging from energy
1
,
2
to (opto)
electronic devices
3
5
to materials discovery
6
8
. Starting from the crystal
structure and atomic positions as the main inputs, these methods can
predict material properties, includin
g mechanical, electrical, magnetic, and
optical. While computing ground-state
and linear-response properties with
density functional theory (D
FT) is a decades-long effort
9
12
,recentworkhas
focused on modeling ultrafast dynami
cs in materials and simulating time-
domain spectroscopies from
fi
rst principles
13
23
. These methods focused on
nonequilibrium dynamics are a more recent research frontier with both
theoretical and computational challenges.
First-principles calculations in the time domain provide a microscopic
description of nonequilibrium dynamics in materials. These methods
propagate in time quantities characterizing the quantum dynamics, such as
the time-dependent electron wave function, density
24
, density matrix
25
,or
Green
sfunction
21
, and can also access the time-dependent atomic positions
and lattice vibrations
17
,
18
. Different schemes are successful in different
regimes. For example, coherent elect
ron dynamics on the attosecond time
scale can be modeled effectively using time-dependent DFT
22
,
26
29
,butthat
approach is not ideal for modeling phonon dynamics, which occurs on a
picosecond time scale
30
.
The real-time Boltzmann transport e
quation (rt-BTE) has emerged as
an effective tool for exploring the coupled electron and phonon dynamics
from femtosecond to nanosecond timescales
15
,
18
,
31
.Inthert-BTE,thetime-
dependent electron populations are o
btained by solving a set of integro-
differential equations accounting for the
e
ph scattering processes on dense
momentum grids. Following an initial excitation, the rt-BTE is propagated
in time to reach thermal equilibrium or steady state in an external
fi
eld. This
scheme employs a femtosecond time step to capture the
e
ph scattering
processes. However, evaluating the s
cattering integral at each time step
makes the rt-BTE approach computatio
nally demanding, even for materials
with a handful of atoms in the unit cell.
1
Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA 91125, USA.
2
Applied Mathematics and Computational
Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
3
Department of Physics, California Institute of Technology, Pasadena, CA
91125, USA.
e-mail:
bmarco@caltech.edu
npj Computational Materials
| (2024) 10:123
1
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1234567890():,;
Data-driven techniques are increa
singly employed in materials mod-
eling, both for accelerating computational work
fl
ows and to gain physical
insight using learning algorithms
32
,
33
. In particular, dynamic mode
decomposition (DMD), which was developed in the last decade to study
fl
uid dynamics, is a valuable tool to linearize dynamical problems and
reduce their dimensionality
34
,
35
.InDMD,explicitsimulationofashort
initial time window allows one to learn the dominant modes governing the
dynamics and extrapolate the simulation to future times at low computa-
tional cost. Recent work has employed DMD to study electron dynamics
described by model Hamiltonians with purely electronic interactions
36
,
37
.
Yet, to date, DMD has not been applied to more computationally intensive
fi
rst-principles studies.
In this work, we combine DMD with
fi
rst-principles calculations of
nonequilibrium electron dynamics, using the framework of the rt-BTE in
the presence of
e
ph collisions and external
fi
elds. We show that DMD
provides an order-of-magnitude computational speed-up while retaining
the full accuracy of the
fi
rst-principles rt-BTE. In addition, DMD reveals key
momentum-space temporal patterns and achieves a signi
fi
cant dimen-
sionality reduction of the nonequilibr
ium physics. Our results include both
high-
fi
eld transport and transient excited-state dynamics and are accom-
panied by a careful characterization of convergence with respect to the size
of the sampling window during which DMD learns the dominant modes.
Taken together, this work provides the b
lueprint for combining data-driven
methods with
fi
rst-principles calculations to study nonequilibrium
dynamics in real materials.
Results
First-principles rt-BTE
We describe the electron distribution u
sing the time-dependent populations
f
n
k
(
t
), which quantify the occupa
tion of each electronic state
n
k
i
,where
k
is
the electron crystal momentum, and
n
is the band index (from now on, we
omit the band index to simplify the notation). Starting from an initial
distribution at time zero,
f
k
(
t
= 0), in the rt-BTE, the populations evolve
according to
38
f
k
ð
t
Þ
t
¼
F
_

k
f
k
ð
t
Þþ
I
½
f
k
ð
t
Þ
;
ð
1
Þ
where
I
½
f
k
ð
t
Þ
is the collision integral accounting for
e
-ph scattering pro-
cesses in momentum space
39
and
F
includesany external
fi
elds applied to the
system.
The rt-BTE simulations use de
nse momentum grids to accurately
describe scattering between electroni
c states via absorption and emission of
phonons. The required grid sizes ar
e typically >100 × 100 × 100 for both
electron and phonon momenta. We time-step Eq. (
1
) using explicit solvers
(Euler or fourth-order Runge
Kutta) or more advanced Strang splitting
techniques
31
. The collision integral inclu
des a summation over the phonon
momentum grid and is evaluated at least once per time step using a parallel
algorithm implemented in the
PERTURBO
code
38
(see the
Methods
section
for details). Although here we focus on t
he dynamics of electrons interacting
with phonons, the rt-BTE formali
sm has also been extended to study
nonequilibrium phonon
17
and exciton dynamics
40
.
DMD learning and prediction of the dynamics
We employ DMD in combination wi
th rt-BTE simulations. The DMD
approach linearizes the dynamics by relating the states of the system at times
t
and
t
+
Δ
t
via a time-independent matrix
A
41
,
42
.Focusingonthe
e
ph
dynamics, this amounts to advancing t
he electronic populations at time
t
using
f
k
ð
t
þ
Δ
t
Þ¼
A
f
k
ð
t
Þ
;
ð
2
Þ
where the populations
f
k
form a vector with size
N
equal to the number of
k
-
points in the electronic m
omentum grid (typically,
N
10
5
10
6
). To obtain
the matrix
A
, we time-step the rt-BTE in a sampling window consisting of
M
time steps (using the
PERTURBO
code
38
), and then we form two matrices
X
1
and
X
2
. The populations
f
k
(
t
)from
t
1
to
t
M
1
are stacked column-wise in the
matrix
X
1
,withcolumn
i
corresponding to time
t
i
and containing the
populations
f
k
(
t
i
)forall
k
-points and bands. The populations from
t
2
to
t
M
are similarly stacked column-wise in the second matrix
X
2
.
According to equation (
2
), these matrices are related by
X
2
=
AX
1
,but
computing
A
naively from the pseudo-inverse of
X
1
has a prohibitive cost
duetothelargesize
N
of the
k
-point grid. To circumvent this problem, in
DMD, one
fi
rst performs a truncated singular value decomposition
(SVD)
43
,
44
of the
X
1
matrix:
X
1
¼
U
Σ
V
y
;
ð
3
Þ
where
Σ
2
R
N
×
ð
M

1
Þ
is a matrix with diagonal entries equal to the singular
values
σ
j
arranged in decreasing order, while
U
2
C
N
×
N
and
V
2
C
ð
M

1
Þ
×
ð
M

1
Þ
are matrices collecting the mut
ually orthogonal singular
vectors
45
.(Above,
V
indicates the Hermitian conjugate of
V
).
Because
X
1
contains time-dependent populations, this SVD pro-
cedure can single out the main patterns in the momentum-space
dynamics. Here, we keep only the
fi
rst
r
singular values (typically,
r
10) to restrict the solution space to the leading
r
momentum-space
modes and then project the matrix
A
onto this reduced
r
-dimensional
space. This procedure provides the matrix
~
A
, with reduced size
r
×
r
,
which can be diagonalized straight
forwardly to obtain the dominant
DMD modes. Using this procedure, the populations at future times
t
>
t
M
are
predicted
that is, obtained without explicit solution of the rt-
BTE
using
f
k
ð
t
>
t
M
Þ
X
r
l
¼
1
b
l
φ
l
k
e
i
ω
DMD
l
t
;
ð
4
Þ
where
φ
l
k
are the momentum-space DMD mod
es obtained from the matrix
~
A
,and
ω
DMD
l
and
b
l
are their frequencies and amplitudes (see the
Methods
section for detailed derivations).
We summarize the main steps of
this DMD procedure, which are
illustrated in Fig.
1
:
1. Simulate the rt-BTE dynamics for the
fi
rst
M
steps and construct the
matrices
X
1
and
X
2
;
2. Perform SVD on
X
1
to
fi
nd the matrix
~
A
in the reduced
r
-dimensional space;
Fig. 1 | Work
fl
ow of DMD plus rt-BTE calcula-
tions.
The
fi
rst
M
steps of the dynamics, which make
up the sampling window for DMD learning, are
simulated by solving the rt-BTE. The resulting
populations
f
k
(
t
) are stacked in the
X
1
and
X
2
matrices with a relative shift of one time step. The
dynamics at later times
t
>
t
M
is predicted with DMD
using the
r
leading modes obtained by SVD of the
matrix
X
1
and diagonalization of the
matrix
~
A
¼
~
U
y
A
~
U
.
https://doi.org/10.1038/s41524-024-01308-4
Article
npj Computational Materials
| (2024) 10:123
2
3. Diagonalize
~
A
to
fi
nd the DMD modes
φ
l
k
and their frequencies
ω
DMD
l
,
with
l
=1
...
r
;
4. Obtain the mode amplitudes
b
l
from the initial condition
f
k
(
t
1
);
5. Predict the dynamics for
t
>
t
M
using Eq. (
4
).
A key parameter is the duration of the sampling window (
t
M
)required
for accurate DMD extrapolation of the dynamics beyond
t
M
.Asthecom-
putational cost of DMD is negligible, the size of the sampling window,
during which the rt-BTE is solved by explicit time-stepping, determines the
computational cost of the entire work
fl
ow.
High-
fi
eld electron dynamics
We employ our DMD-based approach to simulate time-domain electron
dynamics in an applied electric
fi
eld in the presence of
e
-ph collisions. We
recently demonstrated similar calculat
ions using the rt-BTE without the aid
of data-driven techniques
31
.Here,weusethiscasestudytoexplorethe
accuracy and ef
fi
ciency of our rt-BTE plus DMD approach, as well as
fi
nd
optimal values for the sampling window and analyze the momentum-space
DMD modes. Our calculations focus on electrons in GaAs, where the
conduction band has three se
ts of low-energy valleys, at
Γ
and near
L
and
X
in order of increasing energy
46
(see the inset in Fig.
2
a). Upon applying an
electric
fi
eld, the electrons are accelerated to higher band energies while they
also transfer part of that excess energy to the lattice via
e
ph collisions. These
competing mechanisms lead to a steady
-state electronic distribution which
is typically reached on a picosecond to nanosecond time scale.
Our simulations begin with electrons in thermal equilibrium with the
lattice at 300 K. We apply a constant electric
fi
eld
E
and time-step the
electron populations until they reach the steady-state distribution,
f
E
k
,from
whichwecomputethemeandriftvelocity,
v
(
E
), a quantity routinely
measured in experiments
47
49
. Repeating this procedure for multiple
fi
eld
values allows us to construct the ful
l drift velocity versus electric
fi
eld curve
in a material, starting from linear response at low
fi
eld to velocity saturation
at high
fi
eld
31
.
Figure
2
a shows the time-dependent populations in four regions of the
Brillouin zone following the application of a high
fi
eld (5 kV cm
1
). Elec-
trons initially occupying the
Γ
-valley scatter to the higher-energy
L
-and
X
-valleys. As a result, the electron populations in the
Γ
-valley decrease, with
a corresponding increase in
L
-and
X
-valley populations. In regions of
momentum space between the
Γ
-and
L
-valleys, the populations peak at
intermediate times and then relax to lower values.
This dynamics is nontrivial because the populations evolve differently
in different momentum-space regions,
making accurate predictions chal-
lenging. Our DMD approach can learn the dominant modes governing these
intricate dynamics and extrapolate t
he time-dependent populations well
beyond the sampling window. Remarkably, we
fi
nd that a short sampling
window
400 fs to 2 ps out of a total simulation time of 12.5 ps
is suf
fi
-
cient to extrapolate the dynamics all th
e way to steady state, with rt-BTE and
DMD trajectories in nearly exact agre
ement outside the sampling window
(Fig.
2
a). This accuracy extends to the entire set of ~10
5
k
-points considered
in our simulations, providing carrier n
umber conservation within 1% error.
The ability to learn key temporal momentum-space patterns is a
consequence of the relatively rapid decay of the singular values of the
X
1
matrix used for learning the dynam
ics in the sampling window (Fig.
2
b).
This decay becomes slower as the sampling window increases, but it remains
signi
fi
cant even for the longest sampling window of 2 ps used here (note the
log scale in the plot). In turn, the sin
gular value decay enables a striking
dimensionality reduction, with DMD employing only
r
10 modes to solve
the dynamicsas opposed to 10
5
populations
f
k
and billions of
e
ph scattering
termsinthert-BTE.
Fig. 2 | DMD simulations of electrons in GaAs in an applied electric
fi
eld. a
Time-
dependent electron populations
f
k
(
t
) for four electron momenta. The gray region
indicates the shortest sampling window (0.4 ps), and the red vertical line is the
longest sampling window we tested (2 ps). Solid black lines show the rt-BTE results
and orange dashed lines, the DMD predictions obtained using the longest sampling
window. The inset is a schematic of the low-energy band structure of GaAs showing
the
Γ
- and higher energy
L
- and
X
-valleys.
b
Singular values of the
X
1
matrix, with the
ten largest singular values used in our DMD calculations separated by a vertical line.
c
DMD frequencies plotted in the complex plane and shown as circles with radii
proportional to the DMD mode amplitudes
b
l
. In panels
a
c
, the colors indicate the
duration of the DMD sampling window according to the legend given in (
c
).
d
DMD
momentum-space modes
φ
l
k
, multiplied by the corresponding amplitudes
b
l
, given
as a function of energy. The initial state
f
k
(
t
1
) is shown with a dashed line.
e
Convergence of the steady-state drift velocity with respect to the duration of the
DMD sampling window. The rt-BTE value is shown for reference as a dashed line.
https://doi.org/10.1038/s41524-024-01308-4
Article
npj Computational Materials
| (2024) 10:123
3
The choice of an ideal sampling window can rely on the appearance of
speci
fi
c DMD modes at a steady state. Figure
2
cshowstheDMDmode
frequencies
ω
DMD
in the complex plane, where the imaginary part of
ω
DMD
corresponds to the decay rate of a given mode, and the real part gives its
oscillation frequency. The populations
f
k
(
t
) are real-valued and are written
as a summation of complex exponentials in Eq. (
4
). Therefore, physically
meaningful results are possible only when Re
ð
ω
DMD
Þ¼
0(modes1,2)or
when
ω
DMD
appear as conjugate pairs (modes 3
10). Describing the steady
state is particularly important in our simulations. In DMD, all modes with a
non-zero imaginary frequency vanish in the long time limit, with only one
mode surviving at steady state (mode 1 in Fig.
2
c). As the sampling window
increases, the imaginary frequency of this mode goes to zero, providing the
correct steady-state behavior. This analysis allows us to
fi
nd the minimal
sampling window required for accurate
steady-state results by monitoring
the zero-frequency mode.
The DMD eigenvector of the zero
-frequency mode (mode 1 in Fig.
2
d)
determines the steady-state electron distribution
b
l
φ
1
k
¼
f
k
ð
t
!1Þ
,while
the other modes control the transie
nt dynamics. For example, mode 2
governs electron scattering from the
Γ
-tothe
L
-and
X
-valleys, and higher
modes appearing as conjugate pairs exhibit oscillating trends in energy
(modes 3
10 in Fig.
2
d). Converging the zero-frequency mode allows us to
compute the steady-state drift velocity more ef
fi
ciently. Figure
2
eshowsthat
a sampling window of 1.7 ps (170 snapshots) provides a drift velocity nearly
identical to the full rt-BTE calculation, which requires much longer simu-
lation times of up to 12.5 ps (1250 snapshots). On this basis, we conclude
that DMD needs only ~10% of the dynami
cs data for accurate steady-state
predictions.
Velocity-
fi
eld curves
We also employ DMD to accelerate calculations of entire velocity-
fi
eld
curves. This requires the drift velocity for a set of electric
fi
eld values, and
thus we adopt a modi
fi
ed work
fl
ow. Following our recent work
31
,wegra-
dually increase the electric
fi
eld (black curve in Fig.
3
a) and use the steady-
statepopulations for a given
fi
eld,
f
E
k
, as the initial condition for the next
fi
eld
value,
E
+
Δ
E
,wherethe
fi
eld increment
Δ
E
is typically 100
200 V cm
1
.
As the applied
fi
eld increases, the DMD frequencies and momentum-space
modes change substantially. Therefore, for each new
fi
eld value, we repeat
DMD learning in the initial stage of t
he simulation (see the DMD sampling
regions shown as red rectangles in Fig.
3
a). We then predict the steady-state
populations using mode 1 from DMD,
f
E
k
¼
b
1
φ
1
k
and the drift velocity for
that
fi
eld value, and use
f
E
k
as the initial condition for the next
fi
eld value.
The velocity-
fi
eld curves obtained with this approach are shown in Fig.
3
b for GaAs and graphene and compared with rt-BTE results obtained
without DMD. Using DMD lowers signi
fi
cantly the computational cost to
obtain the full velocity-
fi
eld curves by a factor of 10.5 for GaAs and ~ 16.5 for
graphene, while fully preserving the a
ccuracy. Because the drift velocity is
computed as a weighted sum of
f
E
k
31
, the nearly exact agreement between the
DMD and full rt-BTE results demonstrates the accuracy of the DMD
populations in momentum space. The DMD ef
fi
ciency is a consequence of
its ability to capture the dominant modes in the population dynamics using
only a small number of snapshots, with a
similar accuracy regardless of the
electric
fi
eld value.Our strategy of gradually increasing the electric
fi
eld leads
to easier-to-extrapolate dynamics compared to the abrupt application of a
strong
fi
eld.
Excited electron relaxation
Next, we consider different nonequil
ibrium dynamics where the material is
initially prepared in an excited electronic state. This setting can be used, for
example, to model the effect of an optical excitation with a laser pulse
13
.
Different from the high-
fi
eld dynamics, in this case, the long-time limit is
known, and we are primarily interested in the
transient
dynamics. Following
the initial excitation, in the presence of
e
ph interactions and without any
external
fi
elds, the electrons relax to a thermal equilibrium Fermi
Dirac
distribution
50
,
f
FD
k
, typically on a sub-picosecond time scale. This ultrafast
dynamics can be modeled by time-ste
pping the rt-BTE until reaching the
equilibrium Fermi-Dirac distributi
on. Using this approach, our previous
work has shown that electrons
relax to the band edge signi
fi
cantly slower
than holes in GaN semiconductors, with
implications for optoelectronic
devices
15
.
Following that work, we model an ex
cited state in GaN by placing the
electrons ~1 eV above the conduction band edge and then obtain the time-
dependent electron populations by solving the rt-BTE (see Fig.
4
a, b). We
employ DMD to predict this transient dynamics and
fi
nd large errors when
using a short time window of up to ~50 fs (solid red line in Fig.
4
c). The
correct steady state and transient dynamics are obtained by increasing the
sampling window to 200 fs (dashed orange line in Fig.
4
c). Our analysis of
the DMD frequencies shows that the zero-frequency mode describing
thermal equilibrium in the long-ti
me limit appears when the sampling
window reaches 100 fs (see the arrow in Fig.
4
d) and fully converges for
a ~200 fs sampling window. The need
for such a long sampling window
relative to the total duration of the dynamics (400 fs) makes DMD
ineffective.
To address this issue and more ef
fi
ciently study transient dynamics
with DMD, we formulate a different learning procedure that incorporates
knowledge of the equilibrium state. We focus on the difference between the
transient and equilibrium populations,
δ
f
k
ð
t
Þ¼
f
k
ð
t
Þ
f
FD
k
,asopposedto
just
f
k
(
t
) as we did in the high-
fi
eld example. After predicting
δ
f
k
(t) with
DMD, we obtain the time-dependent populations
f
k
(
t
)byaddingbackthe
f
FD
k
term. As
δ
f
k
vanishes in the long-time limit (Fig.
4
b), the zero-frequency
DMD mode is missing when computing
δ
f
k
(Fig.
4
e); all other DMD fre-
quencies associated with
δ
f
k
are similar to those for
f
k
(
t
)(Fig.
4
d, e). We
fi
nd
that the DMD method based on
δ
f
k
is far more effective and requires a
signi
fi
cantly shorter sampling windo
w for accurate DMD predictions
using a 50 fs sampling window, we achieve results similar to DMD for
f
k
(
t
)
with a four times longer (200 fs) window (Fig.
4
c).
With this improved DMD approach, using a sampling window of
only ~12% of the total simulation time
allows us to accurately predict the
average electron relaxation rate in GaN, with a DMD computed value of
5.23 eV fs
1
in close agreement (within 0.8%) with the rt-BTE result. This
result demonstrates that our DMD approach can predict excited electron
relaxation with a high accuracy.
Discussion
The DMD approach introduced here is very ef
fi
cient: the rt-BTE is solved
explicitly on a high-performance com
puter only for a small number of initial
time steps, after which the entire dyn
amics can be computed straightfor-
wardly with DMD, using only a laptop. T
he most demanding step is carrying
out truncated SVD on the
X
1
matrix, but for comparison, this step requires
lower computational resources than even just a single rt-BTE time step.
This remarkable speed-up is achieved by reducing the dimensionality
of the rt-BTE dynamics and is
linked to the shape of the
X
1
matrix. The rt-
BTE employs a large number of
k
-points (about 10
5
10
6
), which equals the
number of rows of the matrix
X
1
, and a signi
fi
cantly smaller number of
snapshots in the DMD sampling window
, typically ~100 time steps, which
sets the number of columns in
X
1
. Following truncated SVD, the size of the
problem is reduced to (at most) the number of snapshots and is typically of
order 50
100, and thus smaller by orders of magnitude compared to the
original rt-BTE. (Note that one could use the entire set of singular values, but
here we prefer using only ~10 singular values to prevent numerical
instabilities
45
).
This ef
fi
ciency allows us to evaluate the accuracy of DMD on the
fl
y,
halting explicit time-stepping of th
e rt-BTE when the DMD steady state or
transient dynamics are fully converged. In addition, our approach addresses
the key challenge of storing the rt-
BTE populations. This is a critical
improvement because in conventional rt-BTE simulations one needs to
store the populations
f
k
(
t
) on dense momentum grids for thousands of time
steps, resulting in terabytes of data. I
n contrast, after carrying out SVD in the
sampling window, DMD stores only a handful of complex frequencies and
momentum-space modes, using which the dynamics can be reconstructed
for the entire simulation.
https://doi.org/10.1038/s41524-024-01308-4
Article
npj Computational Materials
| (2024) 10:123
4